Jiann-Shiun Yuan

Electrical & Computer Engineering

407-823-5719

yuanj@mail.ucf.edu

Harris Engineering Center (bldg. 116) 423

Positions

Editorial

  • Editor, IEEE Transactions on Device and Materials Reliability

Education

Ph.D. Electrical Engineering University of Florida

Research Interests

CMOS Device and Circuit Reliability; RF and Digital Circuit Design, Chip Fabrication and Analysis; RF-DC Energy Harvesting for Biomedical Applications; DC-DC Converter Reliability.

Selected Publications

  • J. S. Yuan, H. D. Yen, S. Y. Chen, R. L. Wang, G. W. Huang, Y. Z. Juang, C. H. Tu, W. K. Yeh, and J. Ma, “Experimental verification of RF stress effect on cascode class E PA performance and reliability,” IEEE Trans. Device and Materials Reliability, pp. 369-375, June 2012
  • J. Steighner and J. S. Yuan, “The effect of SOA enhancement on device ruggedness under UIS for the LDMOSFET,” IEEE Trans. Device and Materials Reliability, pp. 254-262, June 2011
  • Y. Liu and J. S. Yuan, “CMOS RF power amplifier variability and reliability resilient biasing design and analysis,” IEEE Trans. Electron Devices, pp. 540-546, February 2011
  • Y. Liu and J. S. Yuan, “CMOS RF low-noise amplifier design for variability and reliability,” IEEE Trans. Device and Materials Reliability, pp. 450-457, September 2011
  • Y. T. Chen, K. M. Chen, W. K. Yeh, J. S. Yuan, and F. S. Yeh, “Impact of SOI thickness on FUSI-gate CESL CMOS performance and reliability,” IEEE Trans. Device and Materials Reliability, pp. 44-49, March 2011